Journal of Chemical Technology and Applications

Low power dual ion beam sputtered high endurance resistive switch with memristive behavior

Annual Spring Conference and Expo on Chemical Engineering: From Materials Engineering to Nanotechnology
April 04-05, 2018 | Miami, USA

Amitesh Kumar, Mangal Das, Brajendra S Sengar, Md Arif Khan, Abhinav Kranti and Shaibal Mukherjee

Indian Institute of Technology Indore, India

Posters & Accepted Abstracts : J Chem Tech App

Abstract:

The memory effects in a memristor can be realized through the switching behavior between two distinct resistance states, low resistance state (LRS) and high resistance state (HRS) driven by low pulse voltages. ZnO-based thin films such as undoped ZnO, Mg-doped ZnO, Na-doped ZnO and Mn-doped ZnO have attracted considerable interest as promising resistive switching materials. Gallium doping electrically modulates the behavior of ZnO to suit low power switching behavior. Non-lattice oxygen ions and oxygen vacancies as detected by XPS are found to play important role in imparting forming-free resistive switching behavior. e: phd1401102003@iiti.ac.in

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