Materials Science and Nanotechnology

Tuning gallium concentration to enhance absorption coefficient of CuIn1-xGaxSe2 single nanowire

13^th Annual Conference on Materials Science, Metal and Manufacturing
November 16-17, 2017 Paris, France

Mourad Rzaizi, A Oueriagli and D Abouelaoualim

Cadi Ayyad University, Morocco

Posters & Accepted Abstracts : Mater Sci Nanotechnol

Abstract:

Nanowires offer new opportunities for nanoscale quantum optics and cell photovoltaic. These advantages include reduced reflection, extreme light trapping, improved band gap tuning. The I– III–VI2 family of semiconducting compounds, which includes CIGS has been widely used in photovoltaic because of its many advantages. We present a numerical investigation of effect concentration gallium and size on absorption coefficient of CuIn1-xGaxSe2 single nanowire. Within the envelop-function framework, the effect concentration gallium and size on the optical absorption coefficient are studied for the intraband transitions in CuIn1xGaxSe2 single nanowire. Our results show that the parameters of nanostructure and incident optical intensity have a great effect on the optical characteristics of these nanostructures. Thus, the absorption coefficients which can be suitable for great performance optical can be easily obtained by tuning the concentration gallium.

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