+44-7360-538437III-V/ SI INTEGRATION FOR NEXT GENERATION HIGH SPEED LOW POWER ELECTRONICS
Joint Event on Global Congress on BIOTECHNOLOGY & Annual Congress on EMERGING MATERIALS AND NANOTECHNOLOGY
September 06-07 , 2018 | Bangkok , Thailand
Edward Y Chang
National Chiao Tung University, Taiwan
Posters & Accepted Abstracts : Biomed Res
DOI: 10.4066/biomedicalresearch-C4-011
Abstract:
The integration of III-V on Si substrate provides the platform for future high-speed electronic devices due to the high mobility of III-V materials. Among the III-V compound semiconductors, InxGa1-xAs and AlxGa1-xSb are the most promising materials for high speed, low power consumption electronics such as MOSFET, FinFET and TFET due to their low electron effective mass. Simulation and epitaxial growth of InxGa1-xAs and AlxGa1-xSb materials on Si substrate for high speed, low power electronics will be presented in the presentation. The frequency dispersion of accumulation capacitance (Δcacc) and interfacial trap density (Dit) are 3.06 %/dec and 3.2x1012cm-2eV-1 for In0.53Ga0.47As MOSCAPs on Si substrate. A reasonable Dit level with high FL movement efficiency indicates low acceptor-like traps and good carrier transport properties for MOSFET applications.
Biography:
E-mail:
edc@mail.nctu.edu.twPDF HTML