Journal of Biomedical Imaging and Bioengineering

All submissions of the EM system will be redirected to Online Manuscript Submission System. Authors are requested to submit articles directly to Online Manuscript Submission System of respective journal.

Abstract - Journal of Biomedical Imaging and Bioengineering (2020) Volume 0, Issue 0

Temperature Reliability study on Double Gate Tunnel Field Effect Transistor

  

 In the present research work, we report the temperature reliability issues of hetero - structure double gate (het-DG) tunneling field-effect transistor (TFET). Temperature reli­ability is one of the biggest issues of all semiconductor de­vices due to strong dependency of semiconductors with temperature. In the present research work, we have adopt­ed a double gate tunnel FET having two semiconductors Si and GaAs channel materials. In this work, we have compared the temperature effect on hetero-structure (Si/ GaAs) and homostructure (Si) based double (DG) TFET. We have also studied the variation of different device pa­rameters such as gate oxide material and gate work func­tion. The comparison of TFET characteristics and tem­perature sensitivity is done with a high-k and SiO2 as gate dielectric materials. From obtained results, it has been observed that hetero structure double TFET is insensi­tive with temperature variations. This is an indication of excellent future in low power applications with TFETs

Author(s): N. Guenifi

Abstract Full Text PDF